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TC74AC157FT Dataheets PDF



Part Number TC74AC157FT
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Quad 2-Channel Multiplexer
Datasheet TC74AC157FT DatasheetTC74AC157FT Datasheet (PDF)

TC74AC157P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC157P, TC74AC157F, TC74AC157FT Quad 2-Channel Multiplexer The TC74AC157 is an advanced high speed CMOS QUAD 2-CHANNEL MULTIPLEXER fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This device consist of four 2-input digital multiplexer with common select and str.

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TC74AC157P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74AC157P, TC74AC157F, TC74AC157FT Quad 2-Channel Multiplexer The TC74AC157 is an advanced high speed CMOS QUAD 2-CHANNEL MULTIPLEXER fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This device consist of four 2-input digital multiplexer with common select and strobe inputs. When the STROBE input is held “H” level, selection of data is inhibited and all the outputs become “L” level. The SELECT decoding determines whether the A or B inputs get routed to their corresponding Y outputs. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features • High speed: tpd = 4.5 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission lines. • Balanced propagation delays: tpLH ∼− tpHL • Wide operating voltage range: VCC (opr) = 2 to 5.5 V • Pin and function compatible with 74F157 TC74AC157P TC74AC157F TC74AC157FT Weight DIP16-P-300-2.54A SOP16-P-300-1.27A TSSOP16-P-0044-0.65A : 1.00 g (typ.) : 0.18 g (typ.) : 0.06 g (typ.) Start of commercial production 1987-05 1 2014-03-01 Pin Assignment SELECT 1 1A 2 1B 3 1Y 4 2A 5 2B 6 2Y 7 GND 8 A SG B A Y B A Y B A YYB (top view) 16 VCC 15 ST 14 4A 13 4B 12 4Y 11 3A 10 3B 9 3Y Truth Table Inputs ST SELECT A B H X X X L L L X L L H X L H X L L H X H X: Don’t care Output Y L L H L H TC74AC157P/F/FT IEC Logic Symbol ST (15) EN SELECT (1) G1 1A (2) 1B (3) 2A (5) 1 MUX 1 2B (6) 3A (11) 3B (10) 4A (14) 4B (13) (4) 1Y (7) 2Y (9) 3Y (12) 4Y 2 2014-03-01 System Diagram TC74AC157P/F/FT 1 SELECT 15 ST 2 1A 1B 3 5 2A 2B 6 11 3A 3B 10 14 4A 4B 13 φ φ φ φ φ φ φ φ φ φ 4 1Y 7 2Y 9 3Y 12 4Y Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg −0.5 to 7.0 V −0.5 to VCC + 0.5 V −0.5 to VCC + 0.5 V ±20 mA ±50 mA ±50 mA ±100 mA 500 (DIP) (Note 2)/180 (SOP/TSSOP) mW −65 to 150 °C Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C, a derating factor of −10 mW/°C should be applied up to 300 mW. 3 2014-03-01 Operating Ranges (Note) TC74AC157P/F/FT Characteristics Symbol Rating Unit Supply voltage Input voltage Output voltage Operating temperature Input rise and fall time VCC VIN VOUT Topr dt/dV 2.0 to 5.5 0 to VCC 0 to VCC −40 to 85 0 to 100 (VCC = 3.3 ± 0.3 V) 0 to 20 (VCC = 5 ± 0.5 V) V V V °C ns/V Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Electrical Characteristics DC Characteristics Characteristics Symbol High-level input voltage VIH Test Condition ― Ta = 25°C Ta = −40 to 85°C Unit VCC (V) Min Typ. Max Min Max 2.0 1.50 ― ― 1.50 ― 3.0 2.10 ― ― 2.10 ― V 5.5 3.85 ― ― 3.85 ― Low-level input voltage VIL 2.0 ― ― 0.50 ― 0.50 ― 3.0 ― ― 0.90 ― 0.90 V 5.5 ― ― 1.65 ― 1.65 2.0 1.9 2.0 ― 1.9 ― High-level output voltage VOH IOH = −50 μA VIN = VIH or VIL IOH = −4 mA IOH = −24 mA 3.0 2.9 3.0 ― 2.9 ― 4.5 4.4 4.5 ― 4.4 ― V 3.0 2.58 ― ― 2.48 ― 4.5 3.94 ― ― 3.80 ― IOH = −75 mA (Note) 5.5 ― ― ― 3.85 ― 2.0 ― 0.0 0.1 ― 0.1 Low-level output voltage Input leakage current IOL = 50 μA VIN VOL = VIH or VIL IOL = 12 mA 3.0 ― 0.0 0.1 ― 0.1 4.5 ― 0.0 0.1 ― 0.1 V 3.0 ― ― 0.36 ― 0.44 IOL = 24 mA 4.5 ― ― 0.36 ― 0.44 IOL = 75 mA (Note) 5.5 ― ― ― ― 1.65 IIN VIN = VCC or GND 5.5 ― ― ±0.1 ― ±1.0 μA Quiescent supply .


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