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SE3470/5470
AlGaAs Infrared Emitting Diode
FEATURES TO-46 metal can package
Choice of flat window or lensed package 90¡ or 20¡ (nominal) beam angle option 880 nm wavelength Higher output power than GaAs at equivalent drive currents Wide operating temperature range (- 55¡C to +125¡C) Ideal for high pulsed current applicatio...
