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MRF6S27015NR1 Dataheets PDF



Part Number MRF6S27015NR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF6S27015NR1 DatasheetMRF6S27015NR1 Datasheet (PDF)

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 0, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg., Full Frequency Band, Channel .

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6S27015N Rev. 0, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2000 to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 160 mA, Pout = 3 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 14 dB Drain Efficiency — 22% ACPR @ 5 MHz Offset — - 45 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF6S27015NR1 MRF6S27015GNR1 2300- 2700 MHz, 3 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270- 2 PLASTIC MRF6S27015NR1 CASE 1265A - 02, STYLE 1 TO - 270- 2 GULL PLASTIC MRF6S27015GNR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS Tstg TJ Value - 0.5, +68 - 0.5, +12 - 65 to +175 200 Unit Vdc Vdc °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 7.5 W Avg., Two - Tone Case Temperature 79°C, 3 W CW Symbol RθJC Value (1,2) 2.0 2.2 Unit °C/W Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum) 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. MRF6S27015NR1 MRF6S27015GNR1 1 RF Device Data Freescale Semiconductor Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 40 μAdc) Gate Quiescent Voltage (1) (VDS = 28 Vdc, ID = 160 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 0.4 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss — — 11.6 0.02 — — pF pF VGS(th) VGS(Q) VDS(on) 1.5 2 — 2.2 2.8 0.4 3.5 3.5 0.33 Vdc Vdc Vdc IDSS IDSS IGSS — — — — — — 10 1 500 μAdc μAdc nAdc Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 160 mA, Pout = 3 W Avg., f = 2600 MHz, Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss Gps ηD ACPR IRL 12.5 19 — — 14 22 - 45 - 18 16 — - 42 -9 dB % dBc dB 1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally input matched. MRF6S27015NR1 MRF6S27015GNR1 2 RF Device Data Freescale Semiconductor R1 VBIAS + C11 R2 C1 C2 Z7 Z18 RF INPUT R3 Z1 C3 Z2 Z3 Z4 Z5 Z6 DUT Z19 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 C6 Z17 C4 C7 C8 RF OUTPUT VSUPPLY VSUPPLY C5 C9 C10 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 0.503″ x 0.066″ Microstrip 0.905″ x 0.066″ Microstrip 0.371″ x 0.300″ x 0.049″ Taper 0.041″ x 0.016″ Microstrip 0.245″ x 0.851″ Microstrip 0.248″ x 0.851″ Microstrip 0.973″ x 0.050″ Microstrip 0.085″ x 0.485″ Microstrip 0.091″ x 0.667″ Microstrip 0.138″ x 0.816″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB 0.143″ x 0.816″ Microstrip 0.101″ x 0.667″ Microstrip 0.073″ x 0.485″ Microstrip 0.120″ x 0.021″ Microstrip 0.407″ x 0.170″ Microstrip 0.714″ x 0.066″ Microstrip 0.496″ x 0.066″ Microstrip 0.475″ x 0.050″ Microstrip 0.480″ x 0.050″ Microstrip Taconic RF - 35, 0.030″, εr = 3.5 Figure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic Table 6. MRF6S27015NR1(GNR1) Test Circuit Component Designations and V.


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