MA198

www.DataSheet4U.com Switching Diodes MA3X198 (MA198) Silicon epitaxial planar type Unit: mm For wave detection ■ Features Two elements contained in one package, allowing high-density mounting Soft recovery characteristic (trr = 100 ns) 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) *: t = 1 s Single Series Single Series Single Series Tj Tstg IFSM IFRM Symbol VR VRRM IF(AV) Rating 40 40 100 75 225 170 500 325 150 −55 to +150 °C °C mA mA Unit V V mA 10˚ 1.1+0.2 –0.1 1.1+0.3 –0.1 0 to 0.1 EIAJ: SC-59 1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2 Mini3-G1 Package Marking Symbol: M2F Internal Connection 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Symbol VF1 VF2 Reverse current Terminal capacitance Reverse recovery time* IR Ct trr IF = 100 µA IR = 100 mA VR = 40 V VR = 6 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 IR, RL = 100 Ω Conditions Min 0.65 1 2 Typ Max 0.72 1.2 10 Unit V V nA pF ns 1.0 2.0 100 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 10 MHz. 3. *: trr measurement circuit Bias Application Unit (N-50BU) tr 10...