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IDT71V67902 Dataheets PDF



Part Number IDT71V67902
Manufacturers IDT
Logo IDT
Description (IDT71V67702 / IDT71V67902) Burst Counter Flow-Through Outputs / Single Cycle Deselect
Datasheet IDT71V67902 DatasheetIDT71V67902 Datasheet (PDF)

www.DataSheet4U.com 256K X 36, 512K X 18 IDT71V67702 3.3V Synchronous SRAMs IDT71V67902 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features x x x x x x x x 256K x 36, 512K x 18 memory configurations Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and.

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www.DataSheet4U.com 256K X 36, 512K X 18 IDT71V67702 3.3V Synchronous SRAMs IDT71V67902 2.5V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features x x x x x x x x 256K x 36, 512K x 18 memory configurations Supports fast access times: – 7.5ns up to 117MHz clock frequency – 8.0ns up to 100MHz clock frequency – 8.5ns up to 87MHz clock frequency LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byte writes (BWx) 3.3V core power supply Power down controlled by ZZ input 2.5V I/O supply (VDDQ) Packaged in a JEDEC Standard 100-pin thin plastic quad flatpack (TQFP), 119 ball grid array (BGA) and 165 fine pitch ball grid array (fBGA). Description The IDT71V67702/7902 are high-speed SRAMs organized as 256K x 36/512K x 18. The IDT71V67702/7902 SRAMs contain write, data, address and control registers. There are no registers in the data output path (flow-through architecture). Internal logic allows the SRAM to generate a self-timed write based upon a decision which can be left until the end of the write cycle. The burst mode feature offers the highest level of performance to the system designer, as the IDT71V67702/7902 can provide four cycles of data for a single address presented to the SRAM. An internal burst address counter accepts the first cycle address from the processor, initiating the access sequence. The first cycle of output data will flow-through from the array after a clock-to-data access time delay from the rising clock edge of the same cycle. If burst mode operation is selected (ADV=LOW), the subsequent three cycles of output data will be available to the user on the next three rising clock edges. The order of these three addresses are defined by the internal burst counter and the LBO input pin. The IDT71V67702/7902 SRAMs utilize IDT’s latest high-performance CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array (BGA) and a 165 fine pitch ball grid array (fBGA). Pin Description Summary A 0-A 18 CE CS 0, CS1 OE GW BWE BW1, BW2, BW3, BW4(1) CLK ADV ADSC ADSP LBO ZZ I/O0-I/O31, I/OP1-I/OP4 V DD, V DDQ V SS Address Inputs Chip Enable Chip Selects Output Enable Global Write Enable Byte Write Enable Individual Byte Write Selects Clock Burst Address Advance Address Status (Cache Controller) Address Status (Processor) Linear / Interleaved Burst Order Sleep Mode Data Input / Output Core Power, I/O Power Ground Input Input Input Input Input Input Input Input Input Input Input Input Input I/O Supply Supply Synchronous Synchronous Synchronous Asynchronous Synchronous Synchronous Synchronous N/A Synchronous Synchronous Synchronous DC Asynchronous Synchronous N/A N/A 5317 tbl 01 NOTE: 1. BW3 and BW4 are not applicable for the IDT71V67902. DECEMBER 2003 1 ©2002 Integrated Device Technology, Inc. DSC-5317/08 IDT71V67702, IDT71V67902, 256K x 36, 512K x 18, 3.3V Synchronous SRAMs with 2.5V I/O, Flow-Through Outputs, Single Cycle Deselect Commercial and Industrial Temperature Ranges Pin Definitions(1) Symbol A0-A 18 Pin Function Address Inputs Address Status (Cache Controller) Address Status (Processor) Burst Address Advance Byte Write Enable I/O I I I I Active N/A LOW LOW LOW Description Synchronous Address inputs. The address register is triggered by a combi-nation of the rising edge of CLK and ADSC Low or ADSP Low and CE Low. Synchronous Address Status from Cache Controller. ADSC is an active LOW input that is used to load the address registers with new addresses. Synchronous Address Status from Processor. ADSP is an active LOW inp ut that is used to load the address registers with new addresses. ADSP is gated by CE. Synchronous Address Advance. ADV is an active LOW input that is used to advance the internal burst counter, controlling burst access after the initial address is loaded. When the input is HIGH the burst counter is not incremented; that is, there is no address advance. Synchronous byte write enable gates the byte write inputs BW1-BW4. If BWE is LOW at the rising edge of CLK then BWx inputs are passed to the next stage in the circuit. If BWE is HIGH then the byte write inputs are blocked and only GW can initiate a write cycle. Synchronous byte write enables. BW1 controls I/O0-7, I/OP1, BW2 controls I/O8-15, I/OP2, etc. Any active byte write causes all outputs to be disabled. Synchronous chip enable. CE is used with CS 0 and CS1 to enable the IDT71V67702/7902. CE also gates ADSP. This is the clock input. All timing references for the device are made with respect to this input. Synchronous active HIGH chip select. CS 0 is used with CE and CS1 to enable the chip. Synchrono us active LOW chip select. CS1 is used with CE and CS0 to enable the chip. Synchronous global write enable. This input will write all four 9-bit data bytes when LOW on the rising edge of CLK. GW supersedes individual byte write enables. Synchronous dat.


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