2SK2595

www.DataSheet4U.com 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz) Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge. An Adequate handling procedure is requested. 2SK2595 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* Pch* Tch Tstg 2 1 Ratings 17 ±10 1.1 5 20 150 –45 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Symbol I DSS I GSS VGS(off) Ciss Coss Pout Min. — — 0.6 — — 37.3 Typ — — — 68 27 38.45 Max. 10 ±5.0 1.3 — — — Unit µA µA V pF pF dBm Test Conditions VDS = 12 V, VGS = 0 VGS = ±10V, VDS = 0 I D = 6mA, VDS = 12V VGS = 5V, VDS = 0 f = 1MHz VDS = 12V, VGS = 0 f = 1MHz VDS = 12V, f = 836.5MHz Pin = 29.5dBm VDS = 12V Pout = 37.3dBm f = 836.5MHz Pin = 29.5dBm Drain Rational ηD 50 60 — % 2 2SK2595 Main Characteristics 3 2SK2595 4 2SK2595 5 2SK2595 Package Dimensions Unit: mm 6 2SK2595 When using this document, keep the following in mind: 1. This document may, wholly or partial...