PG03DBTFC

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG03DBTFC TVS Diode for ESD Protection in Portable Electronics CATHODE MARK FEATURES Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 s) Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. E B A 2 1 D C DIM A B C D E F MILLIMETERS _ 0.05 1.00 + 0.80+0.10/-0.05 _ 0.05 0.60 + _ 0.05 0.30 + 0.40 MAX _ 0.05 0.13 + Low clamping voltage. Low leakage current. 1. ANODE 2. CATHODE F APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA’s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. TFSC Marking 2 SYMBOL PPK Tj Tstg RATING 50 -55 150 -55 150 2 1 CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Junction Temperature Storage Temperature UNIT W ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Junction Capacitance ) TEST CONDITION It=1mA VRWM=3.3V VR=0V, f=1MHz MIN. 4.2 TYP. MAX. 3.3 6.2 20 25 UNIT V V A pF SYMBOL VRWM VBR IR CJ 2005. 6. 8 Revision No : 0 T MAXIMUM RATING (Ta=25 ) 1 1/1 ...