COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET
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ZXMC4A16DN8
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel = V(BR)DSS= 40V : RDS(on)=...
Description
www.DataSheet4U.com
ZXMC4A16DN8
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET
SUMMARY N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A DESCRIPTION
This new generation of trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
SO8
FEATURES
Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package
APPLICATIONS
Motor drive LCD backlighting
ORDERING INFORMATION
DEVICE REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 2,500
PINOUT
ZXMC4A16DN8TA ZXMC4A16DN8TC
DEVICE MARKING
ZXMC
4A16
TOP VIEW
ISSUE 1 - NOVEMBER 2004 1
SEMICONDUCTORS
ZXMC4A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (V GS = 10V; T A =25°C) (b)(d) (V GS = 10V; T A =70°C) (b)(d) (V GS = 10V; T A =25°C) (a)(d) Pulsed drain current
(c) (b)
SYMBOL V DSS V GS ID
N-channel 40 Ϯ20
P-channe| -40 Ϯ20
UNIT V V
5.2 4.1 4.0 I DM IS I SM PD PD PD T j , T stg 24 2.5 24 1.25 10 1.8 14 2.1 17 -55 to +150
-4.7 -3.8 -3.6 -23 2.3 23
A A A A A A W mW/°C W mW/°C W mW/°C °C
Continuous source current (body diode) Pulsed source current (body diode) (c) Power dissipation at T A =25°C (a) (d) Linear derating factor Power dissipation at T A =25°C (a) (e) Linear derating factor Power dissipat...
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