TQM7136

www.DataSheet4U.com Preliminary: Subject to change without notice WIRELESS COMMUNICATIONS DIVISION VCTRL1 VCC1 GND TQM7136 DATA SHEET Bias Control RFIN Match Match RFOUT 3V HBT SiGe CDMA POWER AMPLIFIER MODULE VREF VCTRL2 VCC2 Features § § § § § § § § High Efficiency Three quiescent current states CMOS compatible logic inputs Excellent ACP and ALT Small 8 pin 6x6mm module Internally matched input and output Full ESD Protection Low leakage current Product Description: The TQM7136 is a 3V, 2 stage SiGe HBT Power Amplifier Module designed for use in mobile phones. Its RF performance meets the requirements for products designed to IS-95/98 standards. The quiescent current of the TQM7136 is set by the base-band processor using two CMOS compatible ICQ control voltages (VCTRL1 and VCTRL2). Overall current consumption of the device is minimized by selecting the lowest ICQ state available for each power output level. RF input and output matching is included within the module; therefore, minimal external circuitry is required. The TQM7136 gives excellent RF performance with low current consumption resulting in longer talk times in portable applications. The small 6mm square surface mount package is ideal for new generation small and light phones. Electrical Specifications: Parameter Frequency CDMA mode Pout1 CDMA Mode Efficiency1 Power2 Min 824 28 36 31.5 51 Typ Max 849 Units MHz dBm % dBm % Applications § § Cellular Band CDMA IS-95/98 based mobile phones. Single-Mode, Du...