DatasheetsPDF.com

BLF4G10-120 Dataheets PDF



Part Number BLF4G10-120
Manufacturers NXP
Logo NXP
Description UHF power LDMOS transistor
Datasheet BLF4G10-120 DatasheetBLF4G10-120 Datasheet (PDF)

www.DataSheet4U.com BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit. Mode of operation CW 2-tone [1] [2] f (MHz) VDS (V) PL (W) 120 48 (AV) Gp (dB) (typ) 19 19 ηD (%) 57 40 46 ACPR400 ACPR600 EVMrms IMD3.

  BLF4G10-120   BLF4G10-120


Document
www.DataSheet4U.com BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit. Mode of operation CW 2-tone [1] [2] f (MHz) VDS (V) PL (W) 120 48 (AV) Gp (dB) (typ) 19 19 ηD (%) 57 40 46 ACPR400 ACPR600 EVMrms IMD3 (dBc) (dBc) (dBc) (%) (typ) (typ) (typ) −61 [1] −72 [2] 1.5 −31 861 to 961 28 861 to 961 28 GSM EDGE 861 to 961 28 120 (PEP) 19 ACPR400 at 30 kHz resolution bandwidth ACPR600 at 30 kHz resolution bandwidth CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 = −61 dBc (typ) x ACPR600 = −72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (800 MHz to 1000 MHz) s Internally matched for ease of use www.DataSheet4U.com Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 1.3 Applications s RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier applications in the 800 MHz to 1000 MHz frequency range. 2. Pinning information Table 2: Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Symbol BLF4G10-120 (SOT502A) 1 3 2 2 3 sym039 1 BLF4G10S-120 (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 1 3 sym039 [1] Connected to flange 3. Ordering information Table 3: Ordering information Package Name BLF4G10-120 BLF4G10S-120 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads Version SOT502A SOT502B Type number 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min −0.5 −65 Max 65 +15 12 +150 200 Unit V V A °C °C 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 2 of 14 www.DataSheet4U.com Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 5. Thermal characteristics Table 5: Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 °C PL = 60 W PL = 120 W 0.76 0.65 0.85 0.74 K/W K/W Min Typ Max Unit 6. Characteristics Table 6: Characteristics Tj = 25 °C; unless otherwise specified. Symbol Parameter VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 180 mA VDS = 28 V; ID = 900 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 6 V; VDS = 10 V VGS = 15 V; VDS = 0 V VDS = 10 V; ID = 10 A Min 65 2.5 2.7 27 Typ 3.1 3.2 30 9.0 Max Unit 3.5 3.7 3 300 V V V µA A nA S Ω pF V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 6 A feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz 0.09 2.5 - 7. Application information Table 7: Application information Mode of operation: 2-tone (100 kHz tone spacing); f = 960 MHz. VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; unless otherwise specified. Symbol Gp IRL ηD IMD3 Parameter power gain input return loss drain efficiency third order intermodulation distortion Conditions PL(PEP) = 120 W PL(PEP) = 120 W PL(PEP) = 120 W PL(PEP) = 120 W Min 18 44 Typ 19 −8 46 −31 Max −5 −27 Unit dB dB % dBc 7.1 Ruggedness in class-AB operation The BLF4G10-120 and BLF4G10S-120 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 850 mA; PL = 120 W (CW); f = 960 MHz. 9397 750 14549 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 10 January 2006 3 of 14 www.DataSheet4U.com Philips Semiconductors BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor 20.5 Gp (dB) 19.5 001aac400 80 ηD (%) 60 20 Gp (dB) 19 001aac401 60 ηD (%) 40 18.5 ηD Gp 40 ηD 18 20 Gp 20 17.5 16.5 0 50 100 150 PL (W) 0 200 17 0 100 200 PL(PEP) (W) 0 300 VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz VDS = 28 V; IDq = 850 mA; Tcase = 25 °C; f = 960 MHz Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values 0 IMD3 (dBc) 001aac403 0 IMD (dBc) −20.


BLF4G10LS-120 BLF4G10-120 BLF4G10S-120


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)