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MT28F322D20

Micron Technology
Part Number MT28F322D20
Manufacturer Micron Technology
Description (MT28F322D18 / MT28F322D20) FLASH MEMORY
Published Feb 7, 2007
Detailed Description com 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extend...
Datasheet PDF File MT28F322D20 PDF File

MT28F322D20
MT28F322D20

Overview
com 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.
18µm Process Technology FEATURES • Flexible dual-bank architecture – Support for true concurrent operation with zero latency – Read bank a during program bank b and vice versa – Read bank a during erase bank b and vice versa • Basic configuration: Seventy-one erasable blocks – Bank a (8Mb for data storage) – Bank b (24Mb for program storage) • VCC, VCCQ, VPP voltages – 1.
70V (MIN), 1.
90V (MAX) VCC, VCCQ (MT28F322D18 only) – 1.
80V VCC, VCCQ (MIN); 2.
20V VCC (MAX)and 2.
25V VCCQ (MAX) (MT28F322D20 only) – 0.
9V (TYP) VPP (in-system PROGRAM/ERASE) – 12V ±5% (HV...


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