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IRFS644A Dataheets PDF



Part Number IRFS644A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet IRFS644A DatasheetIRFS644A Datasheet (PDF)

www.DataSheet4U.com Advanced Power MOSFET FEATURES s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s Lower Leakage Current : 10 μA (Max.) @ VDS = 250V s Lower RDS(ON) : 0.214 Ω (Typ.) IRFS644A BVDSS = 250 V RDS(on) = 0.28 Ω ID = 7.9 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Cont.

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www.DataSheet4U.com Advanced Power MOSFET FEATURES s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s Lower Leakage Current : 10 μA (Max.) @ VDS = 250V s Lower RDS(ON) : 0.214 Ω (Typ.) IRFS644A BVDSS = 250 V RDS(on) = 0.28 Ω ID = 7.9 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds ② ① ① ③ ① Value 250 7.9 5 56 ±30 390 7.9 4.3 4.8 43 0.35 - 55 to +150 Units V A A V mJ A mJ V/ns W W/℃ ℃ 300 Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 2.89 62.5 Units ℃/W IRFS644A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(밠iller? Charge Min. Typ. Max. Units 250 -2.0 -----------------0.28 ------6.85 180 80 17 17 74 32 46 9.3 19.5 --4.0 100 -100 10 100 0.28 -210 95 50 50 160 80 61 --nC ns μA Ω Ω V V/℃ V nA N-CHANNEL POWER MOSFET Test Condition VGS=0V,ID=250μA ID=250μA VGS=30V VGS=-30V VDS=250V VDS=200V,TC=125℃ VGS=10V,ID=3.95A VDS=40V,ID=3.95A ④ ④ See Fig 7 VDS=5V,ID=250μA 1230 1600 pF VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=125V,ID=14A, RG=9.1Ω See Fig 13 VDS=200V,VGS=10V, ID=14A See Fig 6 & Fig 12 ④ ⑤ ④⑤ Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ① ④ Min. Typ. Max. Units --------215 1.59 7.9 56 1.5 --A V ns μC Test Condition Integral reverse pn-diode in the MOSFET TJ=25℃,IS=7.9A,VGS=0V TJ=25℃,IF=14A diF/dt=100A/μs ④ Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=10mH, IAS=7.9A, VDD=50V, RG=27Ω, Starting TJ =25℃ ③ ISD≤14A, di/dt≤250A/μs, VDD≤BVDSS , Starting TJ =25℃ ④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature N-CHANNEL POWER MOSFET Fig 1. Output Characteristics VGS Top : 15V 10 V 8.0 V 7.0 V 6.0 V 5.5V 5.0 V Botto.


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