Dual N-Channel 40-V (D-S) MOSFET
Dual N-Channel 40-V (D-S) MOSFET
Si4910DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.027 at VGS = 10 V ...
Description
Dual N-Channel 40-V (D-S) MOSFET
Si4910DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.027 at VGS = 10 V 40
0.032 at VGS = 4.5 V
ID (A)a 6.0 4.8
Qg (Typ.) 9.6
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4910DY-T1-E3 (Lead (Pb)-free) Si4910DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES Halogen-free According to IEC 61249-2-21
Available TrenchFET® Power MOSFET 100 % Rg and UIS Tested
APPLICATIONS CCFL Inverter
D1 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
...
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