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MITSUBISHI SEMICONDUCTOR
MGF0952P
L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
DESCRIPTION
The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
FEATURES
High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25Bm High power gain Glp=13.5dB(TYP.) @f=2.15GHz High power added efficiency ηadd=50%(TYP.) @f=2.15GHz,Pin=25dBm Plastic Mold Lead-less PKG
APPLICATION
For L/S Band power amplifiers
Fig.1
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=700mA Rg=100Ω
Delivery
Tape & Reel(1.5K)
(Ta=25°C)
Absolute maximum ratings
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-15 -15 3.5 -10 21 20.0 150 -40 to +150 (Ta=25°C)
Unit
V V A mA mA W °C °C
Recommended maximum ratings
Symbol
Tch
Parameter
Cannel temperature
Ratings
150 (Ta=25°C)
Unit
°C
Electrical characteristics
Symbol
VGS(off) Po *1 ηadd GLP IM3 *1
*2
Parameter
Gate to source cut-off voltage Output power Power added Efficiency Linear Power Gain 3 order Modulation Distortion Thermal Resistance *1
rd
Test conditions
VDS=3V,ID=12.6mA VDS=10V,ID=700mA,f=2.15GHz *1:Pin=25dBm, *2:Pin=15dBm *3:f1=2.15GHz,f2=2.16GHz Po(SCL)=25dBm ∆Vf Method Min. -1 35.0 -11 ---
Limits
Typ. -3 36.5 50 13.5 -42 4.5 Max. -5 ----6.5
Unit
V dBm % dB dBc °...
