2SK3581-01L

www.DataSheet4U.com 2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 500 A ID ±16 A ID(puls] ±64 V VGS ±30 A IAR *2 16 mJ EAS *1 212.2 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 225 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C *1 L=1.52mH, Vcc=50V,Tch=25°C, See to Avalanche Energy Graph *2 Tch < 150°C = *3 IF < *4 VDS < = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/µs, Vcc < = 500V Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avala...