(SS10PH9 / SS10PH10) High Current Density Surface Mount High-Voltage Schottky Rectifier
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SS10PH9 & SS10PH10
Preliminary
Vishay General Semiconductor
High Current Density Surface Mount Hi...
www.DataSheet4U.com
SS10PH9 & SS10PH10
Preliminary
Vishay General Semiconductor
High Current Density Surface Mount High-Voltage
Schottky Rectifier
FEATURES Very low profile - typical height of 1.1 mm
K
Ideal for automated placement Guardring for overvoltage protection
1 2 TO-277A (SMPC)
K Cathode Anode 1 Anode 2
High Barrier Technology, Tj = 175 °C Maximum Low leakage current Meets MSL level 1, per J-STD-020C Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-277A (SMPC) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked
MAJOR RATINGS AND CHARACTERISTICS
IF(AV) VRRM IFSM EAS VF at IF = 10 A IR Tj max. 10 A 90 V, 100 V 200 A 20 mJ 0.661 V 0.3 µA 175 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 2 A, L = 10 mH, Tj = 25 °C Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM IF(AV) IFSM EAS dv/dt TJ, TSTG SYMBOL SS10PH9 1...