Document
NTB52N10
Power MOSFET 52 Amps, 100 Volts
N−Channel Enhancement−Mode D2PAK
Features
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Mounting Information Provided for the D2PAK Package • Pb−Free Packages are Available
Typical Applications
• PWM Motor Controls • Power Supplies • Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TC = 25°C − Continuous @ TC = 100°C − Pulsed (Note 1)
Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2)
VDSS VDGR
VGS VGSM
ID ID IDM PD
100 100
"20 "40
52 40 156 178 1.43 2.0
Vdc Vdc Vdc
Adc
W W/°C
W
Operating and Storage Temperature Range
TJ, Tstg −55 to °C +150
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 40 A, L = 1.0 mH, RG = 25 W)
EAS
800 mJ
Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2)
RqJC RqJA RqJA
°C/W 0.7 62.5 50
Maximum Lead Temperature for Soldering Purposes, 1/8in from case for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%. 2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu. Area 0.412 in2).
© Semiconductor Components Industries, LLC, 2011
1
March, 2011 − Rev. 4
http://onsemi.com
VDSS 100 V
RDS(ON) TYP 23 mW @ 10 V
ID MAX 52 A
N−Channel D
G
4
12 3
D2PAK CASE 418B
STYLE 2
S
MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain
NTB 52N10G AYWW
12 3 Gate Drain Source
NTB52N10 A Y WW G
= Device Code = Assembly Location = Year = Work Week = Pb−Free Package
ORDERING INFORMATION
Device NTB52N10 NTB52N10G
NTB52N10T4 NTB52N10T4G
Package D2PAK
D2PAK (Pb−Free)
D2PAK
D2PAK (Pb−Free)
Shipping† 50 Units / Rail 50 Units / Rail
800 / Tape & Reel 800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Publication Order Number: NTB52N10/D
NTB52N10
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
Static Drain−to−Source On−State Resistance
(VGS = 10 Vdc, ID = 26 Adc) (VGS = 10 Vdc, ID = 26 Adc, TJ = 125°C)
Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 52 Adc)
Forward Transconductance (VDS = 26 Vdc, ID = 10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
Rise Time Turn−Off Delay Time Fall Time
(VDD = 80 Vdc, ID = 52 Adc, VGS = 10 Vdc, RG = 9.1 W)
Total Gate Charge Gate−to−Source Charge Gate−to−Drain Charge
(VDS = 80 Vdc, ID = 52 Adc, VGS = 10 Vdc)
BODY−DRAIN DIODE RATINGS (Note 3)
Diode Forward On−Voltage
(IS = 52 Adc, VGS = 0 Vdc) (IS = 37 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 52 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 4. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on) gFS
Ciss Coss Crss
td(on) tr
td(off) tf
Qtot Qgs Qgd
VSD trr ta tb QRR
Min
Typ
Max
Unit
100
−
−
160
Vdc
−
−
mV/°C
mAdc
−
−
5.0
−
−
50
−
−
± 100
nAdc
Vdc
2.0
2.92
4.0
−
−8.75
−
mV/°C
W
−
0.023 0.030
−
0.050 0.060
Vdc
−
1.25
1.45
−
31
−
mhos
−
2250 3150
pF
−
620
860
−
135
265
−
15
25
ns
−
95
180
−
74
150
−
100
190
−
72
135
nC
−
13
−
−
37
−
−
1.06
1.5
Vdc
−
0.95
−
−
148
−
ns
−
106
−
−
42
−
−
0.66
−
mC
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ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
NTB52N10
100 VGS = 10 V 7 V
90 9V
80 8V
70
TJ = 25°C 6V
60
5.5 V
50
40
30
5V
20 4.5 V
10 4V
0 0 1.