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NTB52N10 Dataheets PDF



Part Number NTB52N10
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet NTB52N10 DatasheetNTB52N10 Datasheet (PDF)

NTB52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Mounting Information Provided for the D2PAK Package • Pb−Free Packages are Available Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−S.

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NTB52N10 Power MOSFET 52 Amps, 100 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Avalanche Energy Specified • IDSS and RDS(on) Specified at Elevated Temperature • Mounting Information Provided for the D2PAK Package • Pb−Free Packages are Available Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.0 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TC = 25°C − Continuous @ TC = 100°C − Pulsed (Note 1) Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 2) VDSS VDGR VGS VGSM ID ID IDM PD 100 100 "20 "40 52 40 156 178 1.43 2.0 Vdc Vdc Vdc Adc W W/°C W Operating and Storage Temperature Range TJ, Tstg −55 to °C +150 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 40 A, L = 1.0 mH, RG = 25 W) EAS 800 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2) RqJC RqJA RqJA °C/W 0.7 62.5 50 Maximum Lead Temperature for Soldering Purposes, 1/8in from case for 10 seconds TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%. 2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu. Area 0.412 in2). © Semiconductor Components Industries, LLC, 2011 1 March, 2011 − Rev. 4 http://onsemi.com VDSS 100 V RDS(ON) TYP 23 mW @ 10 V ID MAX 52 A N−Channel D G 4 12 3 D2PAK CASE 418B STYLE 2 S MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain NTB 52N10G AYWW 12 3 Gate Drain Source NTB52N10 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device NTB52N10 NTB52N10G NTB52N10T4 NTB52N10T4G Package D2PAK D2PAK (Pb−Free) D2PAK D2PAK (Pb−Free) Shipping† 50 Units / Rail 50 Units / Rail 800 / Tape & Reel 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTB52N10/D NTB52N10 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C) Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage VDS = VGS, ID = 250 mAdc) Temperature Coefficient (Negative) Static Drain−to−Source On−State Resistance (VGS = 10 Vdc, ID = 26 Adc) (VGS = 10 Vdc, ID = 26 Adc, TJ = 125°C) Drain−to−Source On−Voltage (VGS = 10 Vdc, ID = 52 Adc) Forward Transconductance (VDS = 26 Vdc, ID = 10 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Notes 3 & 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time (VDD = 80 Vdc, ID = 52 Adc, VGS = 10 Vdc, RG = 9.1 W) Total Gate Charge Gate−to−Source Charge Gate−to−Drain Charge (VDS = 80 Vdc, ID = 52 Adc, VGS = 10 Vdc) BODY−DRAIN DIODE RATINGS (Note 3) Diode Forward On−Voltage (IS = 52 Adc, VGS = 0 Vdc) (IS = 37 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = 52 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 4. Switching characteristics are independent of operating junction temperature. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) VDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qtot Qgs Qgd VSD trr ta tb QRR Min Typ Max Unit 100 − − 160 Vdc − − mV/°C mAdc − − 5.0 − − 50 − − ± 100 nAdc Vdc 2.0 2.92 4.0 − −8.75 − mV/°C W − 0.023 0.030 − 0.050 0.060 Vdc − 1.25 1.45 − 31 − mhos − 2250 3150 pF − 620 860 − 135 265 − 15 25 ns − 95 180 − 74 150 − 100 190 − 72 135 nC − 13 − − 37 − − 1.06 1.5 Vdc − 0.95 − − 148 − ns − 106 − − 42 − − 0.66 − mC http://onsemi.com 2 ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) NTB52N10 100 VGS = 10 V 7 V 90 9V 80 8V 70 TJ = 25°C 6V 60 5.5 V 50 40 30 5V 20 4.5 V 10 4V 0 0 1.


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