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HY57V64420HG

Hynix Semiconductor
Part Number HY57V64420HG
Manufacturer Hynix Semiconductor
Description 4 Banks x 4M x 4Bit Synchronous DRAM
Published Feb 1, 2007
Detailed Description www.DataSheet4U.com HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HG is a 67,108,86...
Datasheet PDF File HY57V64420HG PDF File

HY57V64420HG
HY57V64420HG


Overview
www.
DataSheet4U.
com HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM DESCRIPTION The Hynix HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY57V64420HG is organized as 4banks of 4,194,304x4.
HY57V644020HG is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the ...



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