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GE200NB60S Dataheets PDF



Part Number GE200NB60S
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL IGBT
Datasheet GE200NB60S DatasheetGE200NB60S Datasheet (PDF)

www.DataSheet4U.com STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT General features TYPE VCES VCE(sat) (typ.) 1.2V 1.3V IC 150A 200A TC 100°C 25°C STGE200NB60S 600V ■ ■ ■ ■ ■ High input impedance (voltage driven) Low on-voltage drop (Vcesat) Off losses include tail current Low gate charge High current capability ISOTOP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the P.

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www.DataSheet4U.com STGE200NB60S N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT General features TYPE VCES VCE(sat) (typ.) 1.2V 1.3V IC 150A 200A TC 100°C 25°C STGE200NB60S 600V ■ ■ ■ ■ ■ High input impedance (voltage driven) Low on-voltage drop (Vcesat) Off losses include tail current Low gate charge High current capability ISOTOP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz). Internal schematic diagram Applications ■ ■ Low frequency motor controls Aluminum welding equipment Order codes Part number STGE200NB60S Marking GE200NB60S Package ISOTOP Packaging Tube November 2006 Rev 8 1/13 www.st.com 13 Contents STGE200NB60S Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .............................. 6 3 4 5 6 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/13 STGE200NB60S Electrical ratings 1 Electrical ratings Table 1. Symbol VCES VGE IC IC ICM (1) Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Gate-emitter voltage Collector current (continuous) at TC = 25°C Collector current (continuous) at TC = 100°C Collector current (pulsed) Total dissipation at TC = 25°C Derating factor Value 600 ±20 200 150 400 600 4.8 2500 – 55 to 150 Operating junction temperature Unit V V A A A W W/°C V °C PTOT VISO Tstg Tj 1. Insulation winthstand voltage (DC) Storage temperature Pulse width limited by safe operating area Table 2. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 0.208 30 Unit °C/W °C/W °C/W 3/13 Electrical characteristics STGE200NB60S 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) gfs Static Parameter Collector-emitter breakdown voltage Collector cut-off (VGE = 0) Gate-emitterleakage current (VCE = 0) Gate threshold voltage Test conditions IC = 250µA, VGE = 0 VCE = Max rating, @ 25°C VCE = Max rating, @ 125°C VGE = ±20V, VCE = 0 VCE = VGE, IC = 250µA 3 1.2 1.2 80 Min. 600 500 5 ±100 5 1.6 Typ. Max. Unit V µA mA nA V V V S Collector-emitter saturation VGE = 15V, IC = 100A voltage VGE = 15V, IC=150A,@100°C Forward transconductance VCE = 15V , IC = 100A Table 4. Symbol Cies Coes Cres Qg Qge Qgc ICL Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Latching current Test conditions Min. Typ. Max. 1560 0 1100 95 560 70 170 300 Unit pF pF pF nC nC nC A VCE = 25V, f = 1MHz, VGE = 0 VCE = 480V, IC = 100A, VGE = 15V Vclamp = 480V Tj = 125°C , RG = 10Ω 4/13 STGE200NB60S Electrical characteristics Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tc tr(Voff) td(off) tf tc tr(Voff) td(off) tf Switching on/off (inductive load) Parameter Delay time Current rise time Turn-on current slope Dealy time Current rise time Turn-on current slope Cross-over time Off voltage rise time Delay time Current fall time Cross-over time Off voltage rise time Delay time Current fall time Test conditions IC = 100A , VCC = 480V VGE = 15V , RG = 3Ω Tj = 25°C (see Figure 17) IC = 100A , VCC = 480V VGE = 15V , RG= 3Ω Tj = 125°C (see Figure 17) IC = 100A , VCC = 480V VGE = 15V , RG = 3Ω Tj = 25°C (see Figure 17) IC = 100A , VCC = 480V VGE = 15V , RG= 3Ω Tj = 125°C (see Figure 17) Min. Typ. 64 112 1840 56 114 1800 2.98 1.7 2.4 1.23 4.52 2.6 2.8 1.8 Max. Unit ns ns A/µs ns ns A/µs µs µs µs µs µs µs µs µs Table 6. Symbol Eon (1) Eoff (2) Ets Eon (1) Eoff (2) Ets 1. Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching loss Total switching loss Turn-on switching losses Turn-off switching loss Total switching loss Test conditions VCC = 480V, IC = 100A , VGE= 15V, Tj= 25°C RG= 3Ω (see Figure 17) VCC = 480V, IC = 100A , VGE= 15V, RG= 3Ω Tj= 125°C (see Figure 17) Min. Typ. 11.7 59 70.7 12 92 104 Max. Unit mJ mJ mJ mJ mJ mJ Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17 2. Turn-off losses include also the tail of the collector current. 5/13 Electrical characteristics STGE200NB60S 2.1 Figure 1. Electrical characteristics (curves) Output characteristics Figure 2. Transfe.


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