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STGE200NB60S
N-channel 150A - 600V - ISOTOP Low drop PowerMESH™ IGBT
General features
TYPE VCES VCE(sat) (typ.) 1.2V 1.3V IC 150A 200A TC 100°C 25°C
STGE200NB60S 600V
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High input impedance (voltage driven) Low on-voltage drop (Vcesat) Off losses include tail current Low gate charge High current capability ISOTOP
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).
Internal schematic diagram
Applications
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Low frequency motor controls Aluminum welding equipment
Order codes
Part number STGE200NB60S Marking GE200NB60S Package ISOTOP Packaging Tube
November 2006
Rev 8
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www.st.com 13
Contents
STGE200NB60S
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) .............................. 6
3 4 5 6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STGE200NB60S
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VCES VGE IC IC ICM
(1)
Absolute maximum ratings
Parameter Collector-emitter voltage (VGS = 0) Gate-emitter voltage Collector current (continuous) at TC = 25°C Collector current (continuous) at TC = 100°C Collector current (pulsed) Total dissipation at TC = 25°C Derating factor Value 600 ±20 200 150 400 600 4.8 2500 – 55 to 150 Operating junction temperature Unit V V A A A W W/°C V °C
PTOT
VISO Tstg Tj
1.
Insulation winthstand voltage (DC) Storage temperature
Pulse width limited by safe operating area
Table 2.
Symbol Rthj-case Rthj-amb
Thermal resistance
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Value 0.208 30 Unit °C/W °C/W °C/W
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Electrical characteristics
STGE200NB60S
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 3.
Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) gfs
Static
Parameter Collector-emitter breakdown voltage Collector cut-off (VGE = 0) Gate-emitterleakage current (VCE = 0) Gate threshold voltage Test conditions IC = 250µA, VGE = 0 VCE = Max rating, @ 25°C VCE = Max rating, @ 125°C VGE = ±20V, VCE = 0 VCE = VGE, IC = 250µA 3 1.2 1.2 80 Min. 600 500 5 ±100 5 1.6 Typ. Max. Unit V µA mA nA V V V S
Collector-emitter saturation VGE = 15V, IC = 100A voltage VGE = 15V, IC=150A,@100°C Forward transconductance VCE = 15V , IC = 100A
Table 4.
Symbol Cies Coes Cres Qg Qge Qgc ICL
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Latching current Test conditions Min. Typ. Max. 1560 0 1100 95 560 70 170 300 Unit pF pF pF nC nC nC A
VCE = 25V, f = 1MHz, VGE = 0
VCE = 480V, IC = 100A, VGE = 15V Vclamp = 480V Tj = 125°C , RG = 10Ω
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STGE200NB60S
Electrical characteristics
Table 5.
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tc tr(Voff) td(off) tf tc tr(Voff) td(off) tf
Switching on/off (inductive load)
Parameter Delay time Current rise time Turn-on current slope Dealy time Current rise time Turn-on current slope Cross-over time Off voltage rise time Delay time Current fall time Cross-over time Off voltage rise time Delay time Current fall time Test conditions IC = 100A , VCC = 480V VGE = 15V , RG = 3Ω Tj = 25°C (see Figure 17) IC = 100A , VCC = 480V VGE = 15V , RG= 3Ω Tj = 125°C (see Figure 17) IC = 100A , VCC = 480V VGE = 15V , RG = 3Ω Tj = 25°C (see Figure 17) IC = 100A , VCC = 480V VGE = 15V , RG= 3Ω Tj = 125°C (see Figure 17) Min. Typ. 64 112 1840 56 114 1800 2.98 1.7 2.4 1.23 4.52 2.6 2.8 1.8 Max. Unit ns ns A/µs ns ns A/µs
µs µs µs µs µs µs µs µs
Table 6.
Symbol Eon (1) Eoff (2) Ets Eon (1) Eoff (2) Ets
1.
Switching energy (inductive load)
Parameter Turn-on switching losses Turn-off switching loss Total switching loss Turn-on switching losses Turn-off switching loss Total switching loss Test conditions VCC = 480V, IC = 100A , VGE= 15V, Tj= 25°C RG= 3Ω (see Figure 17) VCC = 480V, IC = 100A , VGE= 15V, RG= 3Ω Tj= 125°C (see Figure 17) Min. Typ. 11.7 59 70.7 12 92 104 Max. Unit mJ mJ mJ mJ mJ mJ
Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 17
2. Turn-off losses include also the tail of the collector current.
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Electrical characteristics
STGE200NB60S
2.1
Figure 1.
Electrical characteristics (curves)
Output characteristics Figure 2. Transfe.