MRF1047T1

www.DataSheet4U.com Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and IC = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes this device the ideal choice in high gain, low noise applications. This device is well suited for low–voltage, low–current, front–end applications, for use in pagers, cellular and cordless phones, and other portable wireless systems. The MRF1047T1 has 16 emitter fingers, with self–aligned and enhanced processing, resulting in a high fτ, low operating current transistor with reduced parasitics. The MRF1047T1 is fully–ion implanted with gold metallization and nitride passivation for maximum device r eliability, performance and uniformity. RF NPN SILICON TRANSISTOR fτ = 12 GHz NFmin = 1.0 dB ICMAX = 45 mA VCEO = 5.0 V SEMICONDUCTOR TECHNICAL DATA LIFETIME BUY Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA High Current Gain–Bandwidth Product, fτ = 12 GHz, 3.0 V @ 15 mA Maximum Stable Gain, 17 dB @ 1.0 GHz, 3.0 V and 10 mA Output Third Order Intercept, OIP3 = 26 dBm @ 1.0 GHz 3.0 V and 15 mA Fully Ion–Implanted with Gold Metallization and Nitride Passivation Pin 1. Base 2. Emitter 3. Collector 3 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous [Note 3] Power Diss...