Document
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TMPG06-6.8 thru TMPG06-43A
Vishay General Semiconductor
Automotive Transient Voltage Suppressors
High Temperature Stability & High Reliability Conditions
FEATURES • Patented PAR® construction • Available in Unidirectional polarity only • 400 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Typical ID less than 1.0 µA above 10 V rating • Solder Dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: MPG06, molded epoxy over passivated junction Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end
ted* n e t Pa
* Patent #'s 4,980,315 5,166,769 5,278,094
Case Style MPG06
MAJOR RATINGS AND CHARACTERISTICS
V(BR) PPPM PD IFSM Tj max. 6.8 V to 43 V 400 W 1.0 W 40 A 185 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Peak power dissipation with a 10/1000 µs waveform
(1)
SYMBOL (Fig. 1) PPPM IPPM PD IFSM VF TJ, TSTG
LIMIT Minimum 400 see next table 1.0 40 3.5 - 65 to + 185
UNIT W A W A V °C
Peak pulse current with a 10/1000 µs waveform (1,2) (Fig. 3) Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5) Peak forward surge current 8.3 ms single half sine-wave Maximum instantaneous forward voltage at 25 A (2) Operating junction and storage temperature range Note: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2)
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
Document Number 88404 13-Dec-06
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TMPG06-6.8 thru TMPG06-43A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
MAXIMUM BREAKDOWN DEVICE TYPE VOLTAGE V(BR) (1) AT IT (V) MIN TMPG06-6.8 TMPG06-6.8A TMPG06-7.5 TMPG06-7.5A TMPG06-8.2 TMPG06-8.2A TMPG06-9.1 TMPG06-9.1A TMPG06-10 TMPG06-10A TMPG06-11 TMPG06-11A TMPG06-12 TMPG06-12A TMPG06-13 TMPG06-13A TMPG06-15 TMPG06-15A TMPG06-16 TMPG06-16A TMPG06-18 TMPG06-18A TMPG06-20 TMPG06-20A TMPG06-22 TMPG06-22A TMPG06-24 TMPG06-24A TMPG06-27 TMPG06-27A TMPG06-30 TMPG06-30A TMPG06-33 TMPG06-33A TMPG06-36 TMPG06-36A TMPG06-39 TMPG06-39A TMPG06-43 TMPG06-43A Note: (1) Pulse test: tp ≤ 50 ms (2) Surge current waveform per Fig. 3 and derated per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 MAX 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.3 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 STANDOFF TEST CURRENT VOLTAGE VWM IT (mA) (V) 10.0 10.0 10.0 10.0 10.0 10.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.0 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) 300 300 150 150 50.0 50.0 10.0 10.0 5.0 5.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 REVERSE LEAKAGE AT VWM TJ = 150 °C ID (µA) 1000 1000 500 500 200 200 50.0 50.0 20.0 20.0 10.0 10.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 PEAK PULSE CURRENT IPPM (2) (A) 27.8 28.6 25.6 26.5 24.0 24.8 21.7 22.4 26.7 27.6 24.7 25.6 23.1 24.0 21.1 22.0 18.2 18.9 17.0 17.8 15.1 15.9 13.7 14.4 12.5 13.1 11.5 12.0 10.2 10.7 9.2 9.7 8.4 8.8 7.7 8.0 7.1 7.4 6.5 6.7 MAXIMUM CLAMPING VOLTAGE AT LPPM VC (Volts) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.5 29.1 27.7 31.9 30.6 34.2 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 MAXIMUM TEMP. COEFFICIENT OF V(BR) (%/°C) 0.057 0.057 0.060 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.096 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101
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Document Number 88404 13-Dec-06
TMPG06-6.8 thru TMPG06-43A
Vishay General Semiconductor
ORDERING INFORMATION
PREFERRED P/N TMPG06-6.8AHE3/54 UN.