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TPCF8303

Toshiba Semiconductor
Part Number TPCF8303
Manufacturer Toshiba Semiconductor
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Published Jan 30, 2007
Detailed Description www.DataSheet4U.com TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook P...
Datasheet PDF File TPCF8303 PDF File

TPCF8303
TPCF8303

Overview
www.
DataSheet4U.
com TPCF8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCF8303 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.
) High forward transfer admittance: |Yfs| = 6.
0 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement-model: Vth = −0.
45 to −1.
2 V (VDS = −10 V, ID = −200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating -20 -20 ±8 -3.
0 -12 1.
35 1.
12 W 0.
53...


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