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RTQ035N03
Transistors
2.5V Drive Nch MOS FET
RTQ035N03
zStructure Silicon N-channel MOS FET zExter...
www.DataSheet4U.com
RTQ035N03
Transistors
2.5V Drive Nch MOS FET
RTQ035N03
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
TSMT6
1.0MAX 0.85 0.7
(1)
(2)
(3)
1pin mark 0.4 0.16
zApplications Switching zPackaging specifications
Package Type RTQ035N03 Code Basic ordering unit (pieces) Taping TR 3000
Each lead has same dimensions Abbreviated symbol : QP
zInner circuit
(6)
(5)
(4)
∗2
∗1
(1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain
(1)
(2)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits 30 12 ±3.5 ±15 1.0 4.0 1.25 150 −55 to +150
Unit V V A A A A W °C °C
zThermal resistance
Parameter Channel to ambient
∗ Mounted on a ceramic board
Symbol Rth(ch-a) ∗
Limits 100
Unit °C/W
0.3~0.6
zFeatures 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive).
2.9 1.9 0.95 0.95
(6) (5) (4)
1.6 2.8
0~0.1
(3)
1/2
RTQ035N03
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage
Static drain-source on...