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IXTH1N100

IXYS Corporation
Part Number IXTH1N100
Manufacturer IXYS Corporation
Description High-Voltage MOSFET
Published Jan 28, 2007
Detailed Description Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N...
Datasheet PDF File IXTH1N100 PDF File

IXTH1N100
IXTH1N100

Overview
Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 1000 V = 1.
5 A = 11 Ω Symbol Test Conditions V DSS VDGR VGS VGSM ID25 I DM T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM IAR EAR EAS dv/dt PD T J TJM T stg Md Weight TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C Mounting torque (TO-247) TO-268 TO-247 Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Maximum Ratings 1000 V 1000 V ±20 V ±30 V 1.
5 A 6 A 1.
5 A 6 mJ 20...


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