IXTP50N20P

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA50N20P IXTP50N20P IXTQ50N20P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-3P,TO-220) TO-263 TO-220 TO-3P Maximum Ratings 200 V 200 V ±20 V ±30 V 50 A 120 A 50 A 1 J 10 V/ns 360 W - 55 ... +175 175 - 55 ... +175 300 260 1.13/10 2.5 3.0 5.5 °C °C °C °C °C Nm/lb.in. g g g VDSS = ID25 = ≤ RDS(on) 200V 50A 60mΩ TO-263 (IXTA) G S TO-220 (IXTP) (TAB) G DS TO-3P (IXTQ) (TAB) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 200 V 2.5 5.0 V ±100 nA 25 μA 250 μA 60 mΩ Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density © 2008 IXYS CORPORATION, All rights reserved DS99156F(07/08) Symbol Test Conditions (TJ = 25°C, unless otherwise spe...