Advanced Power MOSFET
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$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower...
Description
www.DataSheet4U.com
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.)
1 2 3
IRF644A
BVDSS = 250 V RDS(on) = 0.28Ω ID = 14 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (3) (1)
Value 250 14 8.9 56 ±30 490 14 13.9 4.8 139 1.11 - 55 to +150
Units V A A V mJ A mJ V/ns W W/°C
°C 300
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 0.9 -62.5 °C/W Units
Rev. B
©1999 Fairchild Semiconductor Corporation
IRF644A
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forwar...
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