SSM6N15FU

SSM6N15FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FU High Speed Switching Applications Analog Switching Applications Unit: mm Small package Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID 100 mA IDP 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 200 mW Channel temperature Tch 150 °C JEDEC ― Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 2-2J1C high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 6.8 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Equivalent Circuit (top view) 6 5 4 6 5 4 DP Q1 Q2 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure t...