SSM6N09FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N09FU
High Speed Switching Applications
Unit: mm
Small package Low Drain-Source ON resistance.
: Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VD...
