SSM6N05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N05FU
High Speed Switching Applications
Unit: mm
· Small package · Low on resistance : Ron = 0.8 Ω (max) (@VGS = 4 V)
: Ron = 1.2 Ω (max) (@VGS = 2.5 V) · Low gate threshold voltage
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source volt...
