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SSM6N04FU

Toshiba Semiconductor
Part Number SSM6N04FU
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jan 27, 2007
Detailed Description com SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch A...
Datasheet PDF File SSM6N04FU PDF File

SSM6N04FU
SSM6N04FU

Overview
com SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications · · · · With built-in gate-source resistor: RGS = 1 MΩ (typ.
) 2.
5 V gate drive Low gate threshold voltage: Vth = 0.
7~1.
3 V Small package Unit: mm Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note) Tch Tstg Rating 20 10 100 200 150 -55~150 Unit V V mA mW °C °C Note: Total rating JEDEC JEITA TOSHIBA ― ― 2-2J1C Weight: 6.
8 mg (typ.
) Marking Pin Assignment (top view) (Q1, Q2 common) Equivalent C...


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