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SFH6941
LOW CURRENT INPUT MINI OPTOCOUPLER
Preliminary Data Sheet
FEATURES • Transistor Optocoupler in SOT223 Package • End Stackable, 1.27 mm Spacing • Low Current Input • Very High CTR, 150% Typical at IF=1 mA, VCE=0.5V • Good CTR Linearity Versus Forward Current • Minor CTR Degradation • Field Effect Stable by TRIOS® (TRansparent IOn Shield) • High Collector-Emitter Voltage, VCEO=70 V • Low Coupling Capacitance • High Common Mode Transient Immunity • Isolation Test Voltage: 2500 VDC APPLICATIONS • Telecommunication • SMT • PCMCIA • Instrumentation DESCRIPTION The SFH6941 is a four channel mini-optocoupler suitable for high density packaged PCB application. It has a minimum of 2500 VDC isolation from input to output. The device consists of four phototransistors as detectors. Each channel is individually controlled. The optocoupler is housed in a SOT223 package. All the cathodes of the input LEDs and all the collectors of the output transistors are commoned enabling a pin count reduction from 16 pins to 10 pins—a significant space savings as compared to four channels that are electrically isolated individually.
N
Package Dimensions in Inches (mm)
Anode 1 1 Anode 2 2 Common Cathode 3 10 Emitter 1 9 Emitter 2 8 Common Collector 7 Emitter 3 6 Emitter 4 .256 ±.008 (6.5 ±.2)
Anode 3 4 Anode 4 5 .287 (7.3) .264 (6.6) .145 (3.7) .130 (3.3)
10° typ.
.013 (.24) .009 (.32)
.067 (1.7) .059 (1.5)
15° max. .020 (.5) min.
.016 –.002 (.4) (–.05)
(+.1)
+.004
.050 (1.27)
.043 ±.020 (1.1 ±.5)
Absolute Maximum Ratings Emitter(GaAlAs) Reverse Voltage .................................................................................. 3 V DC Forward Current ......................................................................... 5 mA Surge Forward Current (tP≤10 µs) ................................................ 100 mA Total Power Dissipation ..................................................................10 mW Detector (Si Phototransistor) Collector-Emitter Voltage .................................................................. 70 V Emitter-Collector Voltage ..................................................................... 7 V Collector Current ............................................................................ 10 mA Surge Collector Current (tP<1 ms) ................................................. 20 mA Total Power Dissipation ..................................................................20 mW Package Insulation Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74) ......................... 2500 VDC Creepage .................................................................................................≥4 mm Clearance .................................................................................................≥4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 ...................................................175 Isolation Resistance VIO=100 V, TA=25°C.................................................................. ≥1011 Ω VIO=100 V, TA=100°C................................................................ ≥1010 Ω Storage Temperature Range ............................................. –55 to +150°C Ambient Temperature Range............................................. –55 to +100°C Junction Temperature ......................................................................100°C Soldering Temperature (t=10 sec. max.)........................................260°C Dip soldering plus reflow soldering processes
5–282
Characteristics (TA=25°C, unless otherwise specified)
Description Emitter (IR GaAs) Forward Voltage, IF=5 mA Reverse Current, VR=3 V Capacitance, VR=0 V, f=1 MHz Thermal Resistance Detector (Si Phototransistor) Collector-Emitter Voltage, ICE=10 µA Emitter-Collector Voltage, IEC=10 µA Capacitance, VCE=5 V, f=1 MHz Thermal Resistance Package Coupling Capacitance CC 1 pF VCEO VECO CCE RthJA 70 7 6 500 V V pF °K/W VF IR C0 RthJA 1.25 0.01 5 1000 10 V µA pF °K/W Symbol Min. Typ. Max. Unit
Values Description Coupling Transfer Ratio IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V Collector-Emitter Saturation Voltage IF=1 mA Collector-Emitter Leakage Current VCE=10 V Symbol -3 -4 -5 Unit
IC/ IF IC/ IF VCEsat ICEO
100–200 120 (≥50) 0.25 (≤0.4) (IC=0.5 mA) 50
160–320 200 (≥80) 0.25 (≤0.4) (IC=0.8 mA) 50
250–500 300 (≥125) 0.25 (≤0.4) (IC=1.25 mA) 50
% V nA
Switching times, typical IF
RL GND IC
47Ω
VCC
Description Turn-on Time Rise Time Turn-off Time Fall Time
Symbol ton tr toff tf
Values 3 2.6 3.1 2.8
Unit
Test Conditions
µs
IF=2 mA RL=100 Ω TA=25°C VCC=5 V
SFH6941
5–283
Figure 1. LED current versus LED voltage VF=f(IF)
85 50 ° 2 5° –2 ° 5°
Figure 4. Transistor output characteristics TA=25°C, ICE=f(VCE, IF)
25
Figure 7. Permissible forward current diode IF=f(TA=25°C)
8 7
101
20
I F = 5mA
6 5 4 3 2 1 0
100 ICE/mA
15
I F = 4mA I F / mA
I F / mA
10
I F = 3mA I F = 2mA
10 –1 5
I F = 1.