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SFH6941 Dataheets PDF



Part Number SFH6941
Manufacturers Siemens Semiconductor
Logo Siemens Semiconductor
Description LOW CURRENT INPUT MINI OPTOCOUPLER
Datasheet SFH6941 DatasheetSFH6941 Datasheet (PDF)

www.DataSheet4U.com EW SFH6941 LOW CURRENT INPUT MINI OPTOCOUPLER Preliminary Data Sheet FEATURES • Transistor Optocoupler in SOT223 Package • End Stackable, 1.27 mm Spacing • Low Current Input • Very High CTR, 150% Typical at IF=1 mA, VCE=0.5V • Good CTR Linearity Versus Forward Current • Minor CTR Degradation • Field Effect Stable by TRIOS® (TRansparent IOn Shield) • High Collector-Emitter Voltage, VCEO=70 V • Low Coupling Capacitance • High Common Mode Transient Immunity • Isolation Test V.

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www.DataSheet4U.com EW SFH6941 LOW CURRENT INPUT MINI OPTOCOUPLER Preliminary Data Sheet FEATURES • Transistor Optocoupler in SOT223 Package • End Stackable, 1.27 mm Spacing • Low Current Input • Very High CTR, 150% Typical at IF=1 mA, VCE=0.5V • Good CTR Linearity Versus Forward Current • Minor CTR Degradation • Field Effect Stable by TRIOS® (TRansparent IOn Shield) • High Collector-Emitter Voltage, VCEO=70 V • Low Coupling Capacitance • High Common Mode Transient Immunity • Isolation Test Voltage: 2500 VDC APPLICATIONS • Telecommunication • SMT • PCMCIA • Instrumentation DESCRIPTION The SFH6941 is a four channel mini-optocoupler suitable for high density packaged PCB application. It has a minimum of 2500 VDC isolation from input to output. The device consists of four phototransistors as detectors. Each channel is individually controlled. The optocoupler is housed in a SOT223 package. All the cathodes of the input LEDs and all the collectors of the output transistors are commoned enabling a pin count reduction from 16 pins to 10 pins—a significant space savings as compared to four channels that are electrically isolated individually. N Package Dimensions in Inches (mm) Anode 1 1 Anode 2 2 Common Cathode 3 10 Emitter 1 9 Emitter 2 8 Common Collector 7 Emitter 3 6 Emitter 4 .256 ±.008 (6.5 ±.2) Anode 3 4 Anode 4 5 .287 (7.3) .264 (6.6) .145 (3.7) .130 (3.3) 10° typ. .013 (.24) .009 (.32) .067 (1.7) .059 (1.5) 15° max. .020 (.5) min. .016 –.002 (.4) (–.05) (+.1) +.004 .050 (1.27) .043 ±.020 (1.1 ±.5) Absolute Maximum Ratings Emitter(GaAlAs) Reverse Voltage .................................................................................. 3 V DC Forward Current ......................................................................... 5 mA Surge Forward Current (tP≤10 µs) ................................................ 100 mA Total Power Dissipation ..................................................................10 mW Detector (Si Phototransistor) Collector-Emitter Voltage .................................................................. 70 V Emitter-Collector Voltage ..................................................................... 7 V Collector Current ............................................................................ 10 mA Surge Collector Current (tP<1 ms) ................................................. 20 mA Total Power Dissipation ..................................................................20 mW Package Insulation Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74) ......................... 2500 VDC Creepage .................................................................................................≥4 mm Clearance .................................................................................................≥4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 ...................................................175 Isolation Resistance VIO=100 V, TA=25°C.................................................................. ≥1011 Ω VIO=100 V, TA=100°C................................................................ ≥1010 Ω Storage Temperature Range ............................................. –55 to +150°C Ambient Temperature Range............................................. –55 to +100°C Junction Temperature ......................................................................100°C Soldering Temperature (t=10 sec. max.)........................................260°C Dip soldering plus reflow soldering processes 5–282 Characteristics (TA=25°C, unless otherwise specified) Description Emitter (IR GaAs) Forward Voltage, IF=5 mA Reverse Current, VR=3 V Capacitance, VR=0 V, f=1 MHz Thermal Resistance Detector (Si Phototransistor) Collector-Emitter Voltage, ICE=10 µA Emitter-Collector Voltage, IEC=10 µA Capacitance, VCE=5 V, f=1 MHz Thermal Resistance Package Coupling Capacitance CC 1 pF VCEO VECO CCE RthJA 70 7 6 500 V V pF °K/W VF IR C0 RthJA 1.25 0.01 5 1000 10 V µA pF °K/W Symbol Min. Typ. Max. Unit Values Description Coupling Transfer Ratio IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V Collector-Emitter Saturation Voltage IF=1 mA Collector-Emitter Leakage Current VCE=10 V Symbol -3 -4 -5 Unit IC/ IF IC/ IF VCEsat ICEO 100–200 120 (≥50) 0.25 (≤0.4) (IC=0.5 mA) 50 160–320 200 (≥80) 0.25 (≤0.4) (IC=0.8 mA) 50 250–500 300 (≥125) 0.25 (≤0.4) (IC=1.25 mA) 50 % V nA Switching times, typical IF RL GND IC 47Ω VCC Description Turn-on Time Rise Time Turn-off Time Fall Time Symbol ton tr toff tf Values 3 2.6 3.1 2.8 Unit Test Conditions µs IF=2 mA RL=100 Ω TA=25°C VCC=5 V SFH6941 5–283 Figure 1. LED current versus LED voltage VF=f(IF) 85 50 ° 2 5° –2 ° 5° Figure 4. Transistor output characteristics TA=25°C, ICE=f(VCE, IF) 25 Figure 7. Permissible forward current diode IF=f(TA=25°C) 8 7 101 20 I F = 5mA 6 5 4 3 2 1 0 100 ICE/mA 15 I F = 4mA I F / mA I F / mA 10 I F = 3mA I F = 2mA 10 –1 5 I F = 1.


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