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MMG3009NT1

Freescale Semiconductor

Heterojunction Bipolar Transistor

LIFETIME BUY LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15 Freescale Semiconductor Technical Data Heterojunction Bipolar Tra...


Freescale Semiconductor

MMG3009NT1

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Description
LIFETIME BUY LAST ORDER 24 MAY 14 LAST SHIP 24 MAY 15 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier The MMG3009NT1 is a general purpose amplifier that is internally input and output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small-signal RF. Features  Frequency: 0 to 6000 MHz  P1dB: 18 dBm @ 900 MHz  Small--Signal Gain: 15 dB @ 900 MHz  Third Order Output Intercept Point: 34 dBm @ 900 MHz  Single 5 V Supply  Internally Matched to 50 Ohms  Cost--effective SOT--89 Surface Mount Plastic Package  In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel. Document Number: MMG3009NT1 Rev. 7, 9/2014 MMG3009NT1 0--6000 MHz, 15 dB 18 dBm InGaP HBT GPA SOT--89 Table 1. Typical Performance (1) Characteristic 900 2140 3500 Symbol MHz MHz MHz Unit Small--Signal Gain (S21) Gp 15 14 12.5 dB Input Return Loss (S11) IRL --13 --26 --22 dB Output Return Loss (S22) ORL --17 --15 --24 dB Power Output @1dB P1dB 18 18 17.5 dBm Compression Third Order Output Intercept Point OIP3 34 32 1. VCC = 5 Vdc, TA = 25C, 50 ohm system. 31 dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature Symbol Value VCC 7 I...




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