K6F1616U6M

www.DataSheet4U.com Preliminary K6F1616U6M Family Document Title 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial draft Revise - Change package type : from FBGA to TBGA Draft Date August 22, 2000 November 21, 2000 Remark Preliminary Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 0.1 November 2000 Preliminary K6F1616U6M Family FEATURES Process Technology: Full CMOS Organization: 1M x16 Power Supply Voltage: 2.7~3.3V Low Data Retention Voltage: 1.5V(Min) Three state output Package Type: 48-TBGA-9.00x12.00 CMOS SRAM GENERAL DESCRIPTION The K6F1616U6M families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. 1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM PRODUCT FAMILY Power Dissipation Product Family K6F1616U6M-F Operating Temperature Industrial(-40~85°C) Vcc Range 2.7~3.3V Speed 551)/70ns Standby (ISB1, Typ.) 2µ A Operating (ICC1, Max) 4mA PKG ...