DatasheetsPDF.com

IRG4MC30F

International Rectifier
Part Number IRG4MC30F
Manufacturer International Rectifier
Description Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR
Published Jan 27, 2007
Detailed Description INSULATED GATE BIPOLAR TRANSISTOR PD-94313D IRG4MC30F Fast Speed IGBT Features C • Electrically Isolated and Hermeti...
Datasheet PDF File IRG4MC30F PDF File

IRG4MC30F
IRG4MC30F

Overview
INSULATED GATE BIPOLAR TRANSISTOR PD-94313D IRG4MC30F Fast Speed IGBT Features C • Electrically Isolated and Hermetically Sealed • Simple Drive Requirements • Latch-proof • Fast Speed Operation 3 kHz - 8 kHz • High Operating Frequency • Switching-loss Rating includes all "tail" losses • Ceramic Eyelets G E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same ti...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)