2SD2402

www.DataSheet4U.com DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. PACKAGE DRAWING (UNIT: mm) FEATURES High current capacitance Low collector saturation voltage Complementary transistor with 2SB1571 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Symbol VCBO VCEO VEBO IC(DC) IC(pulse) PW ≤ 10 ms duty cycle ≤ 50 % Conditions Ratings 50 30 6.0 5.0 8.0 Unit V V V A A Base current (DC) Base current (pulse) IB(DC) IB(pulse) PW ≤ 10 ms duty cycle ≤ 50 % 16 cm2 × 0.7 mm ceramic board mounted 0.2 0.4 A A Total power dissipation Junction temperature Storage temperature PT Tj Tstg 2.0 150 −55 to +150 W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16155EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD2402 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain...