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IXTH28N50Q

International Rectifier
Part Number IXTH28N50Q
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 26, 2007
Detailed Description com Advanced Technical Information Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, L...
Datasheet PDF File IXTH28N50Q PDF File

IXTH28N50Q
IXTH28N50Q

Overview
com Advanced Technical Information Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXTH 28N50Q IXTT 28N50Q VDSS = 500 V = 28 A ID25 RDS(on) = 0.
20 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ±30 ±40 28 112 28 40 1.
5 10 400 -55 to +150 150 -55 to +150 V V V V A A A mJ J V/ns W °C °C °C °C TO-247 AD (IXTH) (TAB) TO-268 (D3) ( IXTT) G S (TAB) G = ...


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