IRFC2907B Datasheet

IRFC2907B HEXFET Power MOSFET

Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Operating Junction and Storage Temperature Range G S 75V RDS(on) = 2.5mΩ (typ.)∗∗∗ 6" Wafer Test Conditions VGS = 0V, ID = 250µA VGS = 10V, I.

Features

Dot Size Recommended Storage Environment: Recommended Die Attach Conditions: Reference Packaged Part Cr-NiV-Ag ( 1kA°-2kA°-5kA° ) 100% Al (0.008 mm) .257" x .360" [ 6.53 mm x 9.14 mm ] 150 mm, with 100 flat 0.254 mm ± 0.025 mm 01-5403 0.107 mm 0.51 mm Diameter Minimum Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300 °C IRFP2907 NOT ES : 1. AL L DIMENS IONS ARE S HOWN IN MILL IMET ERS [INCHES ]. 2. CONT ROL L ING DIMENS ION: [INCH]. 3. LET T ER DES IGNAT ION: S = S OURCE G = GAT E S K = S OURC.