DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2499, 2SK2499-Z
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION...
DATA SHEET
MOS FIELD EFFECT
TRANSISTORS
2SK2499, 2SK2499-Z
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2499 is N-Channel MOS Field Effect
Transistor designed
for high current switching applications.
FEATURES Low On-Resistance
RDS(on)1 = 9 mW (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 mW (VGS = 4 V, ID = 25 A)
Low Ciss Ciss = 3 400 pF TYP. High Avalanche Capability. Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±50
A
Drain Current (pulse)*
ID(pulse) ±200
A
Total Power Dissipation (Tc = 25 °C)
PT1
75
W
Total Power Dissipation (TA = 25 °C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current**
IAS
50
A
Single Avalanche Energy**
EAS
250 mJ
* PW - 10 ms, Duty Cycle - 1 %
** Starting Tch = 25 °C, RG = 25 W, VGS = 20 V Æ 0
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2 10.0
1.3 ± 0.2
3.0 ± 0.3 6.0 MAX. 5.9 MIN. 12.7 MIN. 15.5 MAX.
4 1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1 2.54
2.8 ± 0.2 2.54 1. Gate
2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
(10.0) 4
4.8 MAX. 1.3 ± 0.2
8.5 ± 0.2
1.0 ± 0.5 1.5 MAX.
1.0 ± 0.3
1.4 ± 0.2
(2.54) (2.54)
123
1.1 ± 0.4 3.0 ± 0.5
(0.5(0R.)8R)
0.5 ± 0.2
1. Gate 2. Drain 3. Source 4. Fin (Drain)
2.8 ± 0.2
MP-25Z (SURFACE MOUNT TYPE)
Drain
Gate
Body Diode
Gate Protec...
