2SC5759

www.DataSheet4U.com 2SC5759 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1389 (Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 10.6 GHz typ. High power gain and low noise figure ; PG = 11.5B typ. , NF = 1.1 dB typ. at f = 900 MHz Very low distortion Output IP3 (800 MHz) = 36 dBm typ. Outline CMPAK-4 2 3 1 4 1. Collector 2. Collector 3. Base 4. Emitter Note: Marking is “WN-”. This data sheet contains tentative specification for new product development. It may partially be subject to change without notice. 2SC5759 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 15 6 1.5 80 200* 150 –55 to +150 Unit V V V mA mW °C °C * When using aluminium ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure S21 parameter Output IP3 I CBO I CEO I EBO hFE Cob fT PG NF |S21|2 OIP3 — — — 80 — 8 7 — — — — — — 120 1.2 10.6 11.5 1.1 10.3 36 1 1 10 160 2.2 — — 1.9 — — µA mA µA V pF GHz dB dB dB dBm VCB = 12 V, IE = 0 VCE = 6 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 50 mA VCB = 5 V, IE = 0 f = 1 MHz VCE...