LX5530

www.DataSheet4U.com LX5530 TM ® InGaP HBT 4.5 – 6.0GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES ƒ Broadband 4.9 – 5.9GHz Operation ƒ Advanced InGaP HBT ƒ Single-Polarity 3 – 5V Supply ƒ Power Gain up to ~ 33dB for VC=5V, Icq = 250mA ƒ Power Gain > ~28dB across 4.95.85GHz ƒ OFDM Mask Compliance Power Pout ~ +25dBm over 4.95.85GHz (ACPR ~ -50dBc @ ±30MHz Offset) ƒ Pout up to +23dBm with EVM ~3% (VC = 5V) ƒ EVM < ~2.5% for Pout=+21dBm across 4.95.85GHz (VC = 5V) ƒ EVM < ~2.5% for Pout=+19dBm across 4.95.85GHz (VC = 4V) ƒ Total Current ~250mA for Pout = +20dBm, Duty Cycle = 99% (VC= 4V) ƒ Complete On-Chip Input Match ƒ Simple Output Match for Optimal Broadband EVM ƒ On-Chip RF Decoupling ƒ Temperature-Compensated OnChip Output Power Detector with Wide Dynamic Range ƒ Small Footprint: 3x3mm ƒ Low Profile: 0.9mm APPLICATIONS The LX5530 is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9 – 5.9 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching and output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3 – 5V, with high power gain of up to 33dB. When operated at 5V supply voltage, it provides up to +25dBm linear output power for 802.11a ...