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IRFZ34VPBF Dataheets PDF



Part Number IRFZ34VPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFZ34VPBF DatasheetIRFZ34VPBF Datasheet (PDF)

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications G l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known fo.

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications G l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient www.irf.com PD - 94868A IRFZ34VPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 28mΩ ID = 30A S TO-220AB Max. 30 21 120 70 0.46 ± 20 81 30 7.0 4.5 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– Max. 2.15 ––– 62 Units A W W/°C V mJ A mJ V/ns °C Units °C/W 1 09/15/09 IRFZ34VPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Ciss Coss Crss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions 60 ––– ––– V VGS = 0V, ID = 250µA ––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 26 mΩ VGS = 10V, ID = 18A „ 2.0 ––– 4.0 V VDS = VGS, ID = 250µA 15 ––– ––– S VDS = 25V, ID = 18A„ ––– ––– 25 µA VDS = 60V, VGS = 0V ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C ––– ––– 100 nA VGS = 20V ––– ––– -100 VGS = -20V ––– ––– 49 ID = 30A ––– ––– 12 nC VDS = 48V ––– ––– 18 VGS = 10V, See Fig. 6 and 13 ––– 10 ––– VDD = 30V ––– 65 ––– ns ID = 30A ––– 31 ––– RG = 12Ω ––– 40 ––– VGS = 10V, See Fig. 10 „ ––– 4.5 ––– Between lead, D 6mm (0.25in.) nH from package G ––– 7.5 ––– and center of die contact S ––– 1120 ––– VGS = 0V ––– 250 ––– VDS = 25V ––– 59 ––– pF ƒ = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Min. Typ. Max. Units Conditions MOSFET symbol D ––– ––– 30 A showing the integral reverse G ––– ––– 120 p-n junction diode. S ––– ––– 1.6 V TJ = 25°C, IS = 30A, VGS = 0V „ ––– 70 110 ns TJ = 25°C, IF = 30A ––– 99 150 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 180µH RG = 25Ω, IAS = 30A. (See Figure 12) ƒ ISD ≤ 30A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com I D, Drain-to-Source Current (A) 1000 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V IRFZ34VPbF 1000 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D, Drain-to-Source Current (A) 10 4.5V 20µs PULSE WIDTH TJ= 25 °C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 4.5V 20µs PULSE WIDTH TJ= 175 °C 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics 1000 I D, Drain-to-Source Curr.


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