Document
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
www.irf.com
PD - 94868A
IRFZ34VPbF
HEXFET® Power MOSFET
D
VDSS = 60V RDS(on) = 28mΩ
ID = 30A
S
TO-220AB
Max. 30 21 120 70 0.46 ± 20 81 30 7.0 4.5
-55 to + 175
300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Typ. ––– 0.50 –––
Max. 2.15 ––– 62
Units
A
W W/°C
V mJ A mJ V/ns
°C
Units
°C/W
1 09/15/09
IRFZ34VPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg Qgs Qgd td(on) tr td(off) tf
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
LD
Internal Drain Inductance
LS
Ciss Coss Crss
Internal Source Inductance
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
60 ––– ––– V VGS = 0V, ID = 250µA
––– 0.062 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 26 mΩ VGS = 10V, ID = 18A 2.0 ––– 4.0 V VDS = VGS, ID = 250µA 15 ––– ––– S VDS = 25V, ID = 18A
––– ––– 25 µA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 48V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 49
ID = 30A
––– ––– 12 nC VDS = 48V
––– ––– 18
VGS = 10V, See Fig. 6 and 13
––– 10 –––
VDD = 30V
––– 65 ––– ns ID = 30A
––– 31 –––
RG = 12Ω
––– 40 –––
VGS = 10V, See Fig. 10
––– 4.5 –––
Between lead,
D
6mm (0.25in.)
nH from package
G
––– 7.5 –––
and center of die contact
S
––– 1120 –––
VGS = 0V
––– 250 –––
VDS = 25V
––– 59 ––– pF ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 30
A showing the
integral reverse
G
––– ––– 120
p-n junction diode.
S
––– ––– 1.6 V TJ = 25°C, IS = 30A, VGS = 0V
––– 70 110 ns TJ = 25°C, IF = 30A ––– 99 150 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 180µH RG = 25Ω, IAS = 30A. (See Figure 12)
ISD ≤ 30A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
I D, Drain-to-Source Current (A)
1000 100
VGS TOP 15V
10V 8.0V
7.0V 6.0V
5.5V 5.0V
BOTTOM 4.5V
IRFZ34VPbF
1000 100
VGS
TOP 15V 10V 8.0V
7.0V 6.0V
5.5V 5.0V BOTTOM 4.5V
I D, Drain-to-Source Current (A)
10
4.5V
20µs PULSE WIDTH
TJ= 25 °C 1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
4.5V
20µs PULSE WIDTH
TJ= 175 °C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
I D, Drain-to-Source Curr.