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RDX100N60
Transistors
10V Drive Nch MOS FET
RDX100N60
zStructure Silicon N-channel MOS FET zExtern...
www.DataSheet4U.com
RDX100N60
Transistors
10V Drive Nch MOS FET
RDX100N60
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5 2.8
14.0
zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.
(1)Gate
15.0
12.0
8.0
2.5
1.3
1.2
0.8 2.54
(1) (2) (3)
2.54
0.75
2.6
zApplications Switching
zPackaging specifications
Package Type RDX100N60 Code Basic ordering unit (pieces) Bulk − 500
(2)Drain (3)Source
zInner circuit
∗1
∗2
(1)
(2)
(3)
∗1 GATE PROTECTION DIODE ∗2 BODY DIODE
(1) Gate (2) Drain (3) Source
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS I D ∗1 IDP ∗2 IS ISP ∗2 IAS ∗3 EAS ∗4 PD Tch Tstg Limits 600 ±30 ±10 ±40 10 40 10 230 45 150 −55 to +150 Unit V V A A A A A mJ W °C °C
Avalanche current Avalanche energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature
∗1 Limited only by maximum temperature allowed ∗2 Pw 10µs, Duty cycle 1% ∗4 L = 4.0mH VDD=90V Rg=25Ω startingTch=25°C ∗3 L = 4.0mH VDD=90V Rg=25Ω
zThermal resistance
Parameter Channel to case Symbol Rth(ch-c) Limits
2.78
Unit °C/W
1/2
RDX100N60
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate thre...