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RDX080N50
Transistors
10V Drive Nch MOS FET
RDX080N50
zStructure Silicon N-channel MOS FET zExtern...
www.DataSheet4U.com
RDX080N50
Transistors
10V Drive Nch MOS FET
RDX080N50
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5 2.8
14.0
zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.
(1)Gate
15.0
12.0
8.0
2.5
1.3
1.2
0.8 2.54
(1) (2) (3)
2.54
0.75
2.6
zApplications Switching
zPackaging specifications
Package Type RDX080N50 Code Basic ordering unit (pieces) Bulk − 500
(2)Drain (3)Source
zInner circuit
*1
*2
(1)
(2)
(3)
∗1 GATE PROTECTION DIODE *2 BODY DIODE
(1) Gate (2) Drain (3) Source
zAbsolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID ∗1 IDP ∗2 IS ISP ∗2 IAS ∗3 EAS ∗4 PD Tch Tstg Limits 500 ±30 ±8 ±32 8 32 8 85 40 150 −55 to +150 Unit V V A A A A A mJ W °C °C
Avalanche current Avalanche energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature
∗1 Limited only by maximum temperature allowed ∗2 Pw 10µs, Duty cycle 1% ∗4 L = 2.3mH VDD=90V Rg=25Ω starting Tch=25°C ∗3 L = 2.3mH VDD=90V Rg=25Ω
zThermal resistance
Parameter Channel to case Symbol Rth(ch-c) Limits Unit °C/W
3.125
1/2
RDX080N50
Transistors
zElectrical characteristics (Ta=25°C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS VGS (th) Gate thresho...