InGaAs AVALANCHE PHOTO DIODES
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MITSUBISHI PHOTO DIODES
PD839C4
InGaAs AVALANCHE PHOTO DIODES
PD839C4
DESCRIPTION PD839C4 is a φ3...
Description
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MITSUBISHI PHOTO DIODES
PD839C4
InGaAs AVALANCHE PHOTO DIODES
PD839C4
DESCRIPTION PD839C4 is a φ35µm InGaAs Avalanche Photodiodes (APD) with Trans Impedance Amplifier(TIA). This APD with TIA features a high-speed response and low noise, and is suitable for 2.5Gb/s optical communication systems.
Feature
Buit in TIA Single 3.3V supply voltage for TIA Differential output Ball lens cap
APPLICATION
Receiver for optical communication system
ABSOLUTE MAXIMUM RATINGS
Symbol Vpd Vcc Pin Ipd Tstg
Note 1)
Parameter APD supply voltage TIA supply voltage Photo input power APD reverse current Storage temperature
Conditions -
Ratings VBR 6 0.5 0.5 -40 ~ +85
Unit V V mW mA C
Note 1: The maximum rating and limitation over which the device should not be operated instant time. And this does not mean the guarantee of its lifetime. As for the reliability, please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance section.
RECOMMENDED OPERATING CONDITIONS Symbol Vcc Tc Parameter TIA supply voltage Case temperature Test conditions Limits Min. 3.0 -20 Typ. 3.3 Max. 5.5 +85 Unit V C
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25 C, Vcc=3.3V, λ=1550nm)
Symbol VBR R Icc fc in Pr Parameter Break down voltage Responsivity TIA consumption current Cut-off frequency Averaged equivalent input noise current density Minimum received sensitivity Test conditions Id=100µΑ M=10, RL=50Ω, Single-ended Pin=0µW RL=50Ω, -3dB, M=10 Pin=0µW, f=10MHz-1.4GHz, RL=50Ω...
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