IXKG25N80C

www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET IXKG 25N80C ISO264TM Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS(on), High Voltage MOSFET VDSS = 800 V ID25 = 25 A RDS(on) = 150 mΩ Symbol VDSS VGS ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C Continuous TC = 25°C TC = 90°C Package lead current limit Io Io = 10A, TC = 25°C = 20A Maximum Ratings 800 ±20 25 9 45 690 0.5 6 250 -55 ... +150 150 -55 ... +125 V V A A A mJ mJ V/ns W °C °C °C °C V~ Nm/lb-in g ISO264TM G D S (TAB) G = Gate, S = Source * Patent pending D = Drain, VDS < VDSS, IF ≤ 17 A, TVJ = 150°C dIR/dt = 100 A/µs TC = 25°C Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low drain to tab capacitance(<40pF) z 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting torque 300 2500 0.9 / 6 8 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 126 297 2 TJ = 25°C TJ = 125°C 10 ±200 150 mΩ mΩ 4 50 V µA µA nA Applications Switched Mode Power Supplies (SMPS) Uninterruptible Power Supplies (UPS) z Power Factor Correction (PFC) z Welding z Ind...