HY5DU283222F

www.DataSheet4U.com HY5DU283222F 128M(4Mx32) GDDR SDRAM HY5DU283222F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Sep. 02 1 HY5DU283222F Rvision History Revision No. 0.4 History 1) Part Number changed from HY5DU283222F to HY6U22F 1) tAC/tDQSCK, tRCD/tRP parameters each speed changed as the followings a) tAC : changed from 0.7ns to 0.9ns at 3.3/4/4.5ns b) tDQSCK : changed from 0.6ns to 0.7ns at 3.3/4/4.5ns c) tRCD/tRP : changed from 5clk to 6clk at 3.3ns and 4clk to 5clk at 4/4.5ns 1) 222Mhz speed bin removed 2) IDD Specification of 200/250MHz part defined 3) AC parameters of 275MHz part defined 4) ViH/ViL changed Vref+/- 0.35 into Vref +/- 0.45 5) Part number changed from HY6U22F to HY5DU283222F 1) Pin capacitance defined a) CK, /CK, All other input-only pins : min 1pF, Max 3PF b) DQ, DQS, DM : min 3pF, Max 5pF 1) 2) 3) 4) 5) 1) 2) 3) 4) 200MHz tCK Max. changed from 7ns to 10ns Device operation and timing diagram removed tRCD/tRP at 275MHz changed from 6clk to 5clk tRC/tRFC SPEC newly defined 375/350MHz AC parameters defined IDD4 SPEC changed 370mA to 300mA 275/300MHz IDD SPEC defined tRC/tRFC/tRAS SPEC. updated Power dissipation SPEC. changed from 1W to 2W Draft Date May.01 Remark 0.5 Jun. 01 0.6 Oct.01 0.7 Nov.01 0.8 Dec.01 0.9 Dec.01 1.0 1.1 1) Input leakage current changed from +/-5uA to +/...