www.DataSheet4U.com
PMR780SN
N-channel µTrenchMOS™ standard level FET
M3D173
Rev. 01 — 5 March 2004
Product data
1. ...
www.DataSheet4U.com
PMR780SN
N-channel µTrenchMOS™ standard level FET
M3D173
Rev. 01 — 5 March 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect
transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface mounted package s Low on-state resistance s Footprint 63% smaller than SOT23 s Fast switching.
1.3 Applications
s Driver circuits s Switching in portable appliances.
1.4 Quick reference data
s VDS ≤ 60 V s Ptot ≤ 0.53 W s ID ≤ 0.55 A s RDSon ≤ 920 mΩ.
2. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT416 (SC-75), simplified outline and symbol Description gate (g) source (s) drain (d)
g 1 Top view 2
MBK090 MBB076
Simplified outline
3
Symbol
d
s
SOT416 (SC-75)
3. Ordering information
Table 2: Ordering information Package Name PMR780SN SC-75 Description Plastic surface mounted package; 3 leads Version SOT416 Type number
Philips Semiconductors
PMR780SN
N-channel µTrenchMOS™ standard level FET
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °...