PMF3800SN

www.DataSheet4U.com PMF3800SN N-channel TrenchMOS standard level FET Rev. 02 — 1 July 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Logic level compatible s Very fast switching s Subminiature surface-mounted package s Gate-source ESD protection diodes 1.3 Applications s Relay driver s High-speed line driver 1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 4.5 Ω s ID ≤ 260 mA s Ptot ≤ 0.56 W 2. Pinning information Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D) G Simplified outline 3 Symbol D 1 2 SOT323 (SC-70) S 03ab60 Philips Semiconductors PMF3800SN N-channel TrenchMOS standard level FET 3. Ordering information Table 2: Ordering information Package Name PMF3800SN SC-70 Description plastic surface mounted package; 3 leads Version SOT323 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM Vesd drain-source voltage drain-gate voltage (DC) gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source (diode forward) current Tsp = 25 °C Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C ...