PBSS9110Y

www.DataSheet4U.com PBSS9110Y 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 01 — 9 June 2004 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features s s s s SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation. 1.3 Applications s Major application segments: x Automotive 42 V power x Telecom infrastructure x Industrial. s Peripheral driver: x Driver in low supply voltage applications (e.g. lamps and LEDs) x Inductive load driver (e.g. relays, buzzers and motors). s DC-to-DC converter. 1.4 Quick reference data Table 1: Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance Conditions Min Typ Max −100 −1 −3 320 Unit V A A mΩ Philips Semiconductors PBSS9110Y 100 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2: Pin 1, 2, 5, 6 3 4 Discrete pinning Description collector base emitter 6 5 4 3 4 1 2 3 SOT363 sym030 Simplified outline Symbol 1, 2, 5, 6 3. Ordering information Table 3: Ordering information Package Name PBSS9110Y Description plastic surface mounted package; 6 leads Version SOT363 Type number 4. Marking Table 4: Marking Marking code 91* [1] Type number PBSS9110Y [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. 9397 750 12844 © Kon...