PBSS9110T

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2004 May 06 2004 May 13 Philips Semiconductors Product specification 100 V, 1 A PNP low VCEsat (BISS) transistor FEATURES SOT23 package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation APPLICATIONS Major application segments – Automotive 42 V power – Telecom infrastructure – Industrial DC-to-DC conversion Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS8110T. MARKING TYPE NUMBER PBSS9110T Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. ∗ = W: Made in China. ORDERING INFORMATION TYPE NUMBER PBSS9110T PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) *U7 Top view handbook, halfpage PBSS9110T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) repetitive peak collector current equivalent on-resistance MAX. −100 −1 −3 320 UNIT V A A mΩ 3 3 1 2 1 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. VERSION SOT23 2004 May 13 2 Philips Semiconductors Product specifi...